日経エレクトロニクス パワーエレクトロニクスアワード2020 最優秀賞
数理物質系 岩室 憲幸


数理物質系(エネルギー物質科学研究センター)の岩室憲幸教授は、SiCパワーMOSFETの低損失特性と高信頼性特性を両立させるショットキーバリアダイオード内蔵SiCトレンチMOSFETに関する研究が評価され、日経エレクトロニクス パワーエレクトロニクスアワード2020 最優秀賞を受賞しました。


Prof. Noriyuki Iwamuro (Faculty of Pure and Applied Sciences, TREMS) was praised for his research on SiC trench MOSFETs with built-in Schottky Barrier Diodes that achieve low loss and high reliability at the same time, and received the highest award of Grand Prize at Nikkei Electronics Power Electronics Awards 2020.

This award is for practical application of a high-performance SiC trench MOSFETs by making an original proposal to apply nickel (Ni) to the metal of the built-in Schottky barrier diode, and by actually prototyping the device and demonstrating its characteristics. It is a commendation for showing the great potential of the devices. This research has been done through a joint research with AIST, Fuji Electric Co., Ltd, and TPEC.